Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO 2 (HZO) and dielectric (DE) Al 2 O 3 demonstrates a current ratio of > 100\times , a TER (tunneling electroresistance) of > 50\times , multilevel states, > 10^{4} sec retention, and a cycling end...

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Veröffentlicht in:IEEE electron device letters 2021-10, Vol.42 (10), p.1464-1467
Hauptverfasser: Hsiang, K.-Y., Liao, C.-Y., Liu, J.-H., Wang, J.-F., Chiang, S.-H., Chang, S.-H., Hsieh, F.-C., Liang, H., Lin, C.-Y., Lou, Z.-F., Hou, T.-H., Liu, C. W., Lee, M. H.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
antiferroelectric
Antiferroelectricity
Bilayers
Electrodes
Ferroelectric
HfZrO
Iron
Junctions
Nonvolatile memory
Tunneling
Voltage measurement
Zirconium
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Zusammenfassung:The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO 2 (HZO) and dielectric (DE) Al 2 O 3 demonstrates a current ratio of > 100\times , a TER (tunneling electroresistance) of > 50\times , multilevel states, > 10^{4} sec retention, and a cycling endurance as high as 10 8 . The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3107940