Mechanism of charge transport in Si/Al2O3/Al structures

Mechanism of charge transport in Si/Al2O3/Al structures

The investigation of current – voltage characteristics of structures Si/Al2O3/Al on the basis of aluminium oxide layers obtained by a method atomic layer deposition is carried out. It is established, that the possible mechanism of charge transport in structure is the space charge limited currents. T...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Castro, R A
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum oxide
Atomic layer epitaxy
Carrier density
Charge transport
Current carriers
Electron mobility
Physics
Silicon
Space charge
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Beschreibung
Zusammenfassung:The investigation of current – voltage characteristics of structures Si/Al2O3/Al on the basis of aluminium oxide layers obtained by a method atomic layer deposition is carried out. It is established, that the possible mechanism of charge transport in structure is the space charge limited currents. The charge carrier concentration (Nt), concentration of traps (n0) and electron mobility (μ) in Al2O3 layer are calculated.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/461/1/012017