Terahertz excitations in HgTe-based field effect transistors

Terahertz excitations in HgTe-based field effect transistors

We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor. Photoconductivity measurements allow for the observation of cyclotron resonance and Shubnikov-de-Haas-like oscillations. However, an unexpected peak was observed at the critical magnetic field value for w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kadykov, A, Consejo, C, Teppe, F, Desrat, W, Viti, L, Vitiello, M S, Coquillat, D, Ruffenach, S, Morozov, S, Kristopenko, S, Marcinkiewicz, M, Dyakonova, N, Knap, W, Gavrilenko, V, Michailov, N N, Dvoretskii, S A
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cyclotron resonance
Field effect transistors
General Physics
Magnetic fields
Phase transitions
Photoconductivity
Physics
Semiconductor devices
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor. Photoconductivity measurements allow for the observation of cyclotron resonance and Shubnikov-de-Haas-like oscillations. However, an unexpected peak was observed at the critical magnetic field value for which zero mode Landau Levels are crossing. Therefore, this specific feature of TeraHertz photoconductivity spectra can tentatively attributed to this magnetic field driven topological phase transition.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/647/1/012009