Fabrication technology of CNT-Nickel Oxide based planar pseudocapacitor for MEMS and NEMS

Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated....

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Veröffentlicht in:	Journal of physics. Conference series 2015-11, Vol.643 (1), p.12092
Hauptverfasser:	Lebedev, E A, Kitsyuk, E P, Gavrilin, I M, Gromov, D G, Gruzdev, N E, Gavrilov, S A, Dronov, A A, Pavlov, A A
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon nanotubes Chemical synthesis Nanoelectromechanical systems Nickel oxides Physics Plasma enhanced chemical vapor deposition Thickness
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated. Dependences of deposited oxide layers thickness on device specific capacities is studied. It is shown that pseudocapacity of nickel oxide thin layer increases specific capacity of the CNT's based device up to 2.5 times.
ISSN:	1742-6588 1742-6596
DOI:	10.1088/1742-6596/643/1/012092