Admittance spectroscopy of Ge Si p-i-n structures with Ge quantum dots
The experimental results on synthesis of Si Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Curre...
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| Veröffentlicht in: | Journal of physics. Conference series 2016-08, Vol.741 (1), p.12015 |
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| container_title | Journal of physics. Conference series |
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| creator | Pishchagin, A A Voitsekhovskii, A V Kokhanenko, A P Serokhvostov, V Yu Dzyadukh, S M Nikiforov, A I |
| description | The experimental results on synthesis of Si Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured. |
| doi_str_mv | 10.1088/1742-6596/741/1/012015 |
| format | Article |
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| subjects | Current voltage characteristics Electrical impedance Germanium Illumination Physics Quantum dots Silicon Spectroscopy Spectrum analysis |
| title | Admittance spectroscopy of Ge Si p-i-n structures with Ge quantum dots |
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