Admittance spectroscopy of Ge Si p-i-n structures with Ge quantum dots

Admittance spectroscopy of Ge Si p-i-n structures with Ge quantum dots

The experimental results on synthesis of Si Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Curre...

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Veröffentlicht in:Journal of physics. Conference series 2016-08, Vol.741 (1), p.12015
Hauptverfasser: Pishchagin, A A, Voitsekhovskii, A V, Kokhanenko, A P, Serokhvostov, V Yu, Dzyadukh, S M, Nikiforov, A I
Format: Artikel
Sprache:eng
Schlagworte:
Current voltage characteristics
Electrical impedance
Germanium
Illumination
Physics
Quantum dots
Silicon
Spectroscopy
Spectrum analysis
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Zusammenfassung:The experimental results on synthesis of Si Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/741/1/012015