Frequency Response of Metal-Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique

MIS-type Al/Al 2 O 3 /p-Si structures were fabricated to identify its admittance analysis through capacitance/conductance versus logarithmic frequency ( {C} / {G} - {V} - {f} ) data in the 1 kHz-5 MHz and ±3 V ranges at room temperature. Admittance measurements determine the surface states ( {N}_{\text{ss}} ) and these states occurred at M/S interlayer arise as a result of high capacitance and conductance values at low frequencies. This is also explained by adequacy of tracking ac signal by {N}_{\text{ss}} at lower frequencies. In consequence with {N}_{\text{ss}} presence, a peak turns up or becomes visible at the normalized parallel conductance versus logarithm of frequency [ {G}_{\text{p}} / \omega - ln( {f} )] plot under various biases. In the energy range of ( 0.17- {E}_{\text{v}} )-( 0.67- {E}_{\text{v}} ), {N}_{\text{ss}} and their life/relaxation time ( \tau ) values vary from 4.95\times 10^{12} to 7.42\times 10^{11} eV ^{-1}\cdot \text{cm}^{-2} and from 7.85\times 10^{-5} to 1.05\times 10^{-6} s, respectively.