Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode
In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diode at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by...
Gespeichert in:
| Veröffentlicht in: | Journal of physics. Conference series 2016-04, Vol.707 (1), p.12018 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 1 |
| container_start_page | 12018 |
| container_title | Journal of physics. Conference series |
| container_volume | 707 |
| creator | Salari, M. Abdolahpour Şenarslan, E. Güzeldir, B. Sağlam, M. |
| description | In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diode at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by evaporation Au metal diameter of about 1.0 mm to the other surface of n-Si in turbo molecular pump at about 10-7 Torr. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark. Then, this diode was subjected to γ-radiation, and I-V and C-V measurements were taken again. Consequently, examines the difference between these two measurements. |
| doi_str_mv | 10.1088/1742-6596/707/1/012018 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2575094770</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2575094770</sourcerecordid><originalsourceid>FETCH-LOGICAL-c374t-288e2fa49c4e6b402f99e3c1a69621d254787c4458c925d3902f3809a9b6bdc93</originalsourceid><addsrcrecordid>eNqFkMFKAzEQhoMoWKuvIAHPcZNsdpMcS6lWKPRQPYdsNktTa1OT7KHP5Xv4TGZZqUeHgRlm_n8GPgDuCX4kWIiCcEZRXcm64JgXpMCEYiIuwOS8uDz3QlyDmxh3GJc5-AQ0i66zJkW47mDaWvj9hWDQrdPJ-QPMOQztPkuCM3oPzVYHbZINLiZnIvSjbdYXB7RxxaxHmwZuzNan9H6CrfOtvQVXnd5He_dbp-DtafE6X6LV-vllPlshU3KWEBXC0k4zaZitG4ZpJ6UtDdG1rClpacW44IaxShhJq7aUWVEKLLVs6qY1spyCh_HuMfjP3sakdr4Ph_xS0YpXWDLOcVbVo8oEH2OwnToG96HDSRGsBp5qQKUGbCrzVESNPLORjkbnj3-X_zH9AK5Mdjk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2575094770</pqid></control><display><type>article</type><title>Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode</title><source>IOP Publishing Free Content</source><source>Institute of Physics IOPscience extra</source><source>EZB-FREE-00999 freely available EZB journals</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Salari, M. Abdolahpour ; Şenarslan, E. ; Güzeldir, B. ; Sağlam, M.</creator><creatorcontrib>Salari, M. Abdolahpour ; Şenarslan, E. ; Güzeldir, B. ; Sağlam, M.</creatorcontrib><description>In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diode at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by evaporation Au metal diameter of about 1.0 mm to the other surface of n-Si in turbo molecular pump at about 10-7 Torr. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark. Then, this diode was subjected to γ-radiation, and I-V and C-V measurements were taken again. Consequently, examines the difference between these two measurements.</description><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/707/1/012018</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Capacitance-voltage characteristics ; Contact resistance ; Diameters ; Electric contacts ; Gold ; Physics ; Radiation ; Room temperature ; Schottky diodes</subject><ispartof>Journal of physics. Conference series, 2016-04, Vol.707 (1), p.12018</ispartof><rights>Published under licence by IOP Publishing Ltd</rights><rights>2016. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-288e2fa49c4e6b402f99e3c1a69621d254787c4458c925d3902f3809a9b6bdc93</citedby><cites>FETCH-LOGICAL-c374t-288e2fa49c4e6b402f99e3c1a69621d254787c4458c925d3902f3809a9b6bdc93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1742-6596/707/1/012018/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,780,784,27924,27925,38868,38890,53840,53867</link.rule.ids></links><search><creatorcontrib>Salari, M. Abdolahpour</creatorcontrib><creatorcontrib>Şenarslan, E.</creatorcontrib><creatorcontrib>Güzeldir, B.</creatorcontrib><creatorcontrib>Sağlam, M.</creatorcontrib><title>Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode</title><title>Journal of physics. Conference series</title><addtitle>J. Phys.: Conf. Ser</addtitle><description>In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diode at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by evaporation Au metal diameter of about 1.0 mm to the other surface of n-Si in turbo molecular pump at about 10-7 Torr. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark. Then, this diode was subjected to γ-radiation, and I-V and C-V measurements were taken again. Consequently, examines the difference between these two measurements.</description><subject>Capacitance-voltage characteristics</subject><subject>Contact resistance</subject><subject>Diameters</subject><subject>Electric contacts</subject><subject>Gold</subject><subject>Physics</subject><subject>Radiation</subject><subject>Room temperature</subject><subject>Schottky diodes</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqFkMFKAzEQhoMoWKuvIAHPcZNsdpMcS6lWKPRQPYdsNktTa1OT7KHP5Xv4TGZZqUeHgRlm_n8GPgDuCX4kWIiCcEZRXcm64JgXpMCEYiIuwOS8uDz3QlyDmxh3GJc5-AQ0i66zJkW47mDaWvj9hWDQrdPJ-QPMOQztPkuCM3oPzVYHbZINLiZnIvSjbdYXB7RxxaxHmwZuzNan9H6CrfOtvQVXnd5He_dbp-DtafE6X6LV-vllPlshU3KWEBXC0k4zaZitG4ZpJ6UtDdG1rClpacW44IaxShhJq7aUWVEKLLVs6qY1spyCh_HuMfjP3sakdr4Ph_xS0YpXWDLOcVbVo8oEH2OwnToG96HDSRGsBp5qQKUGbCrzVESNPLORjkbnj3-X_zH9AK5Mdjk</recordid><startdate>20160401</startdate><enddate>20160401</enddate><creator>Salari, M. Abdolahpour</creator><creator>Şenarslan, E.</creator><creator>Güzeldir, B.</creator><creator>Sağlam, M.</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20160401</creationdate><title>Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode</title><author>Salari, M. Abdolahpour ; Şenarslan, E. ; Güzeldir, B. ; Sağlam, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-288e2fa49c4e6b402f99e3c1a69621d254787c4458c925d3902f3809a9b6bdc93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Capacitance-voltage characteristics</topic><topic>Contact resistance</topic><topic>Diameters</topic><topic>Electric contacts</topic><topic>Gold</topic><topic>Physics</topic><topic>Radiation</topic><topic>Room temperature</topic><topic>Schottky diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Salari, M. Abdolahpour</creatorcontrib><creatorcontrib>Şenarslan, E.</creatorcontrib><creatorcontrib>Güzeldir, B.</creatorcontrib><creatorcontrib>Sağlam, M.</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Journal of physics. Conference series</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Salari, M. Abdolahpour</au><au>Şenarslan, E.</au><au>Güzeldir, B.</au><au>Sağlam, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode</atitle><jtitle>Journal of physics. Conference series</jtitle><addtitle>J. Phys.: Conf. Ser</addtitle><date>2016-04-01</date><risdate>2016</risdate><volume>707</volume><issue>1</issue><spage>12018</spage><pages>12018-</pages><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diode at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by evaporation Au metal diameter of about 1.0 mm to the other surface of n-Si in turbo molecular pump at about 10-7 Torr. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark. Then, this diode was subjected to γ-radiation, and I-V and C-V measurements were taken again. Consequently, examines the difference between these two measurements.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/707/1/012018</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1742-6588 |
| ispartof | Journal of physics. Conference series, 2016-04, Vol.707 (1), p.12018 |
| issn | 1742-6588 1742-6596 |
| language | eng |
| recordid | cdi_proquest_journals_2575094770 |
| source | IOP Publishing Free Content; Institute of Physics IOPscience extra; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Capacitance-voltage characteristics Contact resistance Diameters Electric contacts Gold Physics Radiation Room temperature Schottky diodes |
| title | Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T22%3A23%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20Of%20the%20%CE%B3-%20radiation%20on%20the%20electrical%20characteristics%20of%20the%20Au/n-Si/Au-Sb%20Schottky%20diode&rft.jtitle=Journal%20of%20physics.%20Conference%20series&rft.au=Salari,%20M.%20Abdolahpour&rft.date=2016-04-01&rft.volume=707&rft.issue=1&rft.spage=12018&rft.pages=12018-&rft.issn=1742-6588&rft.eissn=1742-6596&rft_id=info:doi/10.1088/1742-6596/707/1/012018&rft_dat=%3Cproquest_cross%3E2575094770%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2575094770&rft_id=info:pmid/&rfr_iscdi=true |