Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diode at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by evaporation Au metal diameter of about 1.0 mm to the other surface of n-Si in turbo molecular pump at about 10-7 Torr. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark. Then, this diode was subjected to γ-radiation, and I-V and C-V measurements were taken again. Consequently, examines the difference between these two measurements.