High energy electron-beam irradiation effects in Si-SiOx structures
Homogeneous SiOx films (x=1.3, 200 nm and 1000 nm thick) and composite a-Si-SiOy films (y ∼ 1.80) containing amorphous Si nanoparticles have been prepared on crystalline (c-Si) substrate. A part of the films was irradiated at temperature below 50°C by 20 MeV electrons with two different fluences (7....
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | Homogeneous SiOx films (x=1.3, 200 nm and 1000 nm thick) and composite a-Si-SiOy films (y ∼ 1.80) containing amorphous Si nanoparticles have been prepared on crystalline (c-Si) substrate. A part of the films was irradiated at temperature below 50°C by 20 MeV electrons with two different fluences (7.2x1014 and 1.44x1015 el.cm-2). Atomic force microscopy (AFM), Raman spectroscopy and capacitance (conductance) - voltage (C(G)-V) measurements on Al c-Si SiOx Al or Al c-Si (a-Si-SiOy) Al structures were used to get information about the irradiation induced changes in the surface morphology, the phase composition in the film bulk and at the Si-SiOx interface. The AFM results show that the electron irradiation decreases the film surface roughness of the films annealed at 250°C. The Raman scattering data imply appearance of amorphous silicon phase and some structural changes in the oxide matrix of the homogeneous SiOx films. In the composite films electron beam stimulated decrease of the defects at the a-Si SiOy interface has been assumed. The initial C(G)-V results speak about electron induced formation of electrically active defects in the SiOy matrix of the composite films. |
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ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/682/1/012012 |