X-ray photoelectron spectroscopy method for obtaining a CuIn0.95Ga0.05Se2 thin film: development of technology and a phase composition studying

X-ray photoelectron spectroscopy method for obtaining a CuIn0.95Ga0.05Se2 thin film: development of technology and a phase composition studying

A technology of two stage selenezation method in the carrier gas (nitrogen) stream of the reaction component (selenium) has been suggested for the CuIn0.95Ga0.05Se2 thin film growing. Morphology and structure of the CuIn0.95Ga0.05Se2 film have been studied by SEM and XRD methods. Phase compound of f...

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Hauptverfasser: Kalazhokov, Kh Kh, Kalazhokov, Z Kh, Gadjiev, T M, Aliev, M A, Ismailov, A M, Gadjieva, R M, Asvarov, A Sh, Arslanov, R K, Kozyrev, E N, Filonenko, V I, Askerov, R O
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Carrier gases
Morphology
Phase composition
Photoelectron spectroscopy
Photoelectrons
Physics
Selenium
Spectrum analysis
Thin films
X ray photoelectron spectroscopy
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Zusammenfassung:A technology of two stage selenezation method in the carrier gas (nitrogen) stream of the reaction component (selenium) has been suggested for the CuIn0.95Ga0.05Se2 thin film growing. Morphology and structure of the CuIn0.95Ga0.05Se2 film have been studied by SEM and XRD methods. Phase compound of film material for the CuIn0.95Ga0.05Se2 semiconductor solution has been studied by X-ray photoelectron spectroscopy method.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/872/1/012041