Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing

Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing

The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8±0.4 μm2 grain size and 7.3±5.1 nm grain height. Resistive switching from high resistance state...

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Hauptverfasser: Tominov, R V, Zamburg, E G, Khakhulin, D A, Klimin, V S, Smirnov, V A, Chu, Y H, Ageev, O A
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Grain size
High resistance
Low resistance
Metal oxides
Nanocomposites
Physics
Pulsed laser deposition
Pulsed lasers
Switching
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Zusammenfassung:The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8±0.4 μm2 grain size and 7.3±5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9±0.4 V, and from LRS to HRS at 1.5±0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metal-oxide-film RRAM fabrication.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/917/3/032023