Spin and valley transport in the ferromagnetic MoS2 junctions subjected by the gate voltage

In this paper, we have studied valley and spin-polarized transport with different gate voltage in ferromagnetic MoS2 junctions. The results show that, the valley and spin transport through the junctions has a large oscillation. In particular, a fully spin polarized current can be put out by effectively tuning the gate voltage U. Moreover, with increasing of U, the scope of the valley and spin polarization can be greatly expanded. These findings indicate the structure is a considerable candidate for the spintronics or valleytronics device.