Deposition of tungsten disilicide films by DC magnetron sputtering at ultra-low operating pressure

We describe our work on tungsten disilicide film deposition by planar magnetron sputtering at low operating gas pressure (down to 0.08 Pa). The sputter target was a tungsten disilicide composite with diameter 125 mm, and the DC magnetron current 0.1–1 A. We have explored the dependence of film homogeneity over the 100 mm diameter substrate on substrate temperature and distance from the magnetron, and the spatial distribution of ion current density and the effect of operating pressure on the roughness and resistivity of the films. •The effect of operating pressure in the low range (down to 0.08 Pa) on film deposition by planar DC magnetron sputtering using a WSi2 target has been studied.•The influence of working pressure (down to 0.08 Pa) on deposition rate, roughness, adhesion and surface resistivity of WSi2 films was studied.