Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

Different to conventional high-κ gate dielectric fabrication that usually generates porosity and pinhole sites when evaporating solvents or impurities in the thin-film formation process, herein, we report a simple aqueous route to deposit aluminum-gallium-oxide (AGO) alloy gate dielectrics. Compared...

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Veröffentlicht in:Applied physics letters 2021-09, Vol.119 (11), Article 112102
Hauptverfasser: He, Fuchao, Wang, Yifei, Lin, Zhenhua, Su, Jie, Zhang, Jincheng, Chang, Jingjing, Hao, Yue
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Sprache:eng
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Zusammenfassung:Different to conventional high-κ gate dielectric fabrication that usually generates porosity and pinhole sites when evaporating solvents or impurities in the thin-film formation process, herein, we report a simple aqueous route to deposit aluminum-gallium-oxide (AGO) alloy gate dielectrics. Compared to GaOx dielectric, higher performance and aqueous solution-processed low voltage fully oxide thin film transistors (TFTs) are achieved based on the AGO dielectric films. The solution-processed IZO(300 °C)/AGO TFT with optimal performance shows a good charge carrier saturation mobility of 55.4 cm2 V−1 s−1, an on/off current ratio of ∼104, threshold voltage of 0.1 V, and a low operation voltage of 5 V. Our study represents a significant step toward the development of low-cost, easy-control, and large-area oxide electronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0057806