Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes

In this paper, a numerical model is used to analyze photovoltaic parameters according to the electronic properties of InGaN/GaN multiple-quantum-well light emitting diode (MQWLED) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their correspo...

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Veröffentlicht in:	Optical and quantum electronics 2021-10, Vol.53 (10), Article 571
1. Verfasser:	Yahyazadeh, Rajab
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Computer Communication Networks Current density Eigenvalues Eigenvectors Electrical Engineering Electronic properties Finite difference method Gallium nitrides Hydrostatic pressure Indium gallium nitrides Lasers Light emitting diodes Numerical models Optical Devices Optics Photonics Physics Physics and Astronomy Pressure effects Quantum wells Radiative recombination Scattering Spontaneous emission
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