Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes

In this paper, a numerical model is used to analyze photovoltaic parameters according to the electronic properties of InGaN/GaN multiple-quantum-well light emitting diode (MQWLED) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of InGaN/GaN MQWLED and the hole eigenstates are calculated via a 6 × 6 k.p method under applied hydrostatic pressure. All symmetry-allowed transitions up to the fifth subband of the quantum wells (multi-subband model) are considered. The linewidth due to the carrier-carrier and carrier-longitudinal optical phonon scattering are also considered. A change in pressure up to 10 GPa increases the intraband scattering time up to 38 fs for heavy holes and 40 fs for light holes, raises the height of the Lorentz function, reduces the excitonic binding energy, and decreases the spontaneous emission rate up to 1.12 × 10 26 cm - 3 s - 1 eV - 1 and radiative current density up to 75 A / cm 2 . The multi-subband model has a positive effect on the radiative recombination rate.