Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes
In this paper, a numerical model is used to analyze photovoltaic parameters according to the electronic properties of InGaN/GaN multiple-quantum-well light emitting diode (MQWLED) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their correspo...
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| Veröffentlicht in: | Optical and quantum electronics 2021-10, Vol.53 (10), Article 571 |
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| description | In this paper, a numerical model is used to analyze photovoltaic parameters according to the electronic properties of
InGaN/GaN
multiple-quantum-well light emitting diode (MQWLED) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of
InGaN/GaN
MQWLED and the hole eigenstates are calculated via a
6
×
6
k.p method under applied hydrostatic pressure. All symmetry-allowed transitions up to the fifth subband of the quantum wells (multi-subband model) are considered. The linewidth due to the carrier-carrier and carrier-longitudinal optical phonon scattering are also considered. A change in pressure up to 10 GPa increases the intraband scattering time up to 38 fs for heavy holes and 40 fs for light holes, raises the height of the Lorentz function, reduces the excitonic binding energy, and decreases the spontaneous emission rate up to
1.12
×
10
26
cm
-
3
s
-
1
eV
-
1
and radiative current density up to
75
A
/
cm
2
. The multi-subband model has a positive effect on the radiative recombination rate. |
| doi_str_mv | 10.1007/s11082-021-03236-9 |
| format | Article |
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InGaN/GaN
multiple-quantum-well light emitting diode (MQWLED) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of
InGaN/GaN
MQWLED and the hole eigenstates are calculated via a
6
×
6
k.p method under applied hydrostatic pressure. All symmetry-allowed transitions up to the fifth subband of the quantum wells (multi-subband model) are considered. The linewidth due to the carrier-carrier and carrier-longitudinal optical phonon scattering are also considered. A change in pressure up to 10 GPa increases the intraband scattering time up to 38 fs for heavy holes and 40 fs for light holes, raises the height of the Lorentz function, reduces the excitonic binding energy, and decreases the spontaneous emission rate up to
1.12
×
10
26
cm
-
3
s
-
1
eV
-
1
and radiative current density up to
75
A
/
cm
2
. The multi-subband model has a positive effect on the radiative recombination rate.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-021-03236-9</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Computer Communication Networks ; Current density ; Eigenvalues ; Eigenvectors ; Electrical Engineering ; Electronic properties ; Finite difference method ; Gallium nitrides ; Hydrostatic pressure ; Indium gallium nitrides ; Lasers ; Light emitting diodes ; Numerical models ; Optical Devices ; Optics ; Photonics ; Physics ; Physics and Astronomy ; Pressure effects ; Quantum wells ; Radiative recombination ; Scattering ; Spontaneous emission</subject><ispartof>Optical and quantum electronics, 2021-10, Vol.53 (10), Article 571</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-10ec31b0a8abf27503e25204cda46f3935a8af89f41822ff6ee108bc6b8862ab3</citedby><cites>FETCH-LOGICAL-c319t-10ec31b0a8abf27503e25204cda46f3935a8af89f41822ff6ee108bc6b8862ab3</cites><orcidid>0000-0002-9832-4403</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-021-03236-9$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-021-03236-9$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Yahyazadeh, Rajab</creatorcontrib><title>Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>In this paper, a numerical model is used to analyze photovoltaic parameters according to the electronic properties of
InGaN/GaN
multiple-quantum-well light emitting diode (MQWLED) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of
InGaN/GaN
MQWLED and the hole eigenstates are calculated via a
6
×
6
k.p method under applied hydrostatic pressure. All symmetry-allowed transitions up to the fifth subband of the quantum wells (multi-subband model) are considered. The linewidth due to the carrier-carrier and carrier-longitudinal optical phonon scattering are also considered. A change in pressure up to 10 GPa increases the intraband scattering time up to 38 fs for heavy holes and 40 fs for light holes, raises the height of the Lorentz function, reduces the excitonic binding energy, and decreases the spontaneous emission rate up to
1.12
×
10
26
cm
-
3
s
-
1
eV
-
1
and radiative current density up to
75
A
/
cm
2
. The multi-subband model has a positive effect on the radiative recombination rate.</description><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Current density</subject><subject>Eigenvalues</subject><subject>Eigenvectors</subject><subject>Electrical Engineering</subject><subject>Electronic properties</subject><subject>Finite difference method</subject><subject>Gallium nitrides</subject><subject>Hydrostatic pressure</subject><subject>Indium gallium nitrides</subject><subject>Lasers</subject><subject>Light emitting diodes</subject><subject>Numerical models</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Pressure effects</subject><subject>Quantum wells</subject><subject>Radiative recombination</subject><subject>Scattering</subject><subject>Spontaneous emission</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEQx4MoWKtfwFPA89pJss-jlFoLRS8K3kJ2d9Km7KtJVu23N7WCNw_DDPwfAz9CbhncM4Bs5hiDnEfAWQSCizQqzsiEJRmPcpa9n5MJCEijvGDFJblybgcAaZzAhHwttMbK017T7aG2vfPKm4oOFp0bLdK-o36L1KraBOEDaTVai52nNXbO-MMxuOqW6nkWhrZj483QIN2PqvNjSz-xaWhjNltPsTXem25Da9PX6K7JhVaNw5vfPSVvj4vX-VO0flmu5g_rqBKs8BEDDEcJKlel5lkCAnnCIa5qFadaFCIJis4LHbOcc61TxECirNIyz1OuSjEld6fewfb7EZ2Xu360XXgpeZIFL2NpFlz85KoCAmdRy8GaVtmDZCCPhOWJsAyE5Q9hWYSQOIVcMHcbtH_V_6S-Ac-1gCw</recordid><startdate>20211001</startdate><enddate>20211001</enddate><creator>Yahyazadeh, Rajab</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-9832-4403</orcidid></search><sort><creationdate>20211001</creationdate><title>Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes</title><author>Yahyazadeh, Rajab</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-10ec31b0a8abf27503e25204cda46f3935a8af89f41822ff6ee108bc6b8862ab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Current density</topic><topic>Eigenvalues</topic><topic>Eigenvectors</topic><topic>Electrical Engineering</topic><topic>Electronic properties</topic><topic>Finite difference method</topic><topic>Gallium nitrides</topic><topic>Hydrostatic pressure</topic><topic>Indium gallium nitrides</topic><topic>Lasers</topic><topic>Light emitting diodes</topic><topic>Numerical models</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Pressure effects</topic><topic>Quantum wells</topic><topic>Radiative recombination</topic><topic>Scattering</topic><topic>Spontaneous emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yahyazadeh, Rajab</creatorcontrib><collection>CrossRef</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yahyazadeh, Rajab</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2021-10-01</date><risdate>2021</risdate><volume>53</volume><issue>10</issue><artnum>571</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>In this paper, a numerical model is used to analyze photovoltaic parameters according to the electronic properties of
InGaN/GaN
multiple-quantum-well light emitting diode (MQWLED) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of
InGaN/GaN
MQWLED and the hole eigenstates are calculated via a
6
×
6
k.p method under applied hydrostatic pressure. All symmetry-allowed transitions up to the fifth subband of the quantum wells (multi-subband model) are considered. The linewidth due to the carrier-carrier and carrier-longitudinal optical phonon scattering are also considered. A change in pressure up to 10 GPa increases the intraband scattering time up to 38 fs for heavy holes and 40 fs for light holes, raises the height of the Lorentz function, reduces the excitonic binding energy, and decreases the spontaneous emission rate up to
1.12
×
10
26
cm
-
3
s
-
1
eV
-
1
and radiative current density up to
75
A
/
cm
2
. The multi-subband model has a positive effect on the radiative recombination rate.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-021-03236-9</doi><orcidid>https://orcid.org/0000-0002-9832-4403</orcidid></addata></record> |
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| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Characterization and Evaluation of Materials Computer Communication Networks Current density Eigenvalues Eigenvectors Electrical Engineering Electronic properties Finite difference method Gallium nitrides Hydrostatic pressure Indium gallium nitrides Lasers Light emitting diodes Numerical models Optical Devices Optics Photonics Physics Physics and Astronomy Pressure effects Quantum wells Radiative recombination Scattering Spontaneous emission |
| title | Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes |
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