Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation
In this paper, we consider the 7×7 to 5×5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of t...
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| Veröffentlicht in: | Journal of physics. Conference series 2020-03, Vol.1482 (1), p.12010 |
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| creator | Dirko, V V Lozovoy, K A Kokhanenko, A P Kukenov, O I |
| description | In this paper, we consider the 7×7 to 5×5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of the critical thickness of the 7×7 to 5×5 superstructure transition on the substrate temperature are obtained for the first time. |
| doi_str_mv | 10.1088/1742-6596/1482/1/012010 |
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| subjects | Electron diffraction Epitaxial layers Germanium High energy electrons Physics Silicon Substrates Superstructures Synthesis |
| title | Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation |
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