Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation

Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation

In this paper, we consider the 7×7 to 5×5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physics. Conference series 2020-03, Vol.1482 (1), p.12010
Hauptverfasser: Dirko, V V, Lozovoy, K A, Kokhanenko, A P, Kukenov, O I
Format: Artikel
Sprache:eng
Schlagworte:
Electron diffraction
Epitaxial layers
Germanium
High energy electrons
Physics
Silicon
Substrates
Superstructures
Synthesis
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, we consider the 7×7 to 5×5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of the critical thickness of the 7×7 to 5×5 superstructure transition on the substrate temperature are obtained for the first time.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1482/1/012010