GaAs diode structures with n+-p junction on Ge/Si templates

GaAs layers were grown by metalorganic epitaxy on Ge/Si(001) substrates, which were formed by chemical vapor deposition with decomposition of GeH4 on a hot wire. High structural quality of thin Ge layers (0.2 - 0.3 μm) on a silicon substrate made it possible to grow high-quality GaAs layers. The res...

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Veröffentlicht in:	Journal of physics. Conference series 2020-03, Vol.1482 (1), p.12034
Hauptverfasser:	Rykov, A V, Denisov, S A, Shengurov, V G, Baidus, N V, Buzynin, Yu N
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Epitaxial growth Gallium arsenide Germanium Physics Silicon substrates Thin films
Online-Zugang:	Volltext
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