GaAs diode structures with n+-p junction on Ge/Si templates

GaAs layers were grown by metalorganic epitaxy on Ge/Si(001) substrates, which were formed by chemical vapor deposition with decomposition of GeH4 on a hot wire. High structural quality of thin Ge layers (0.2 - 0.3 μm) on a silicon substrate made it possible to grow high-quality GaAs layers. The resulting n+-GaAs/p-GaAs/p-Ge/p+-Si diode structures demonstrate low reverse currents.