A General Ammonium Salt Assisted Synthesis Strategy for Cr3+‐Doped Hexafluorides with Highly Efficient Near Infrared Emissions
The discovery of highly efficient broadband near infrared (NIR) emission material is urgent and crucial for constructing NIR lighting sources and emerging applications. Herein, a series of NIR emission hexafluorides A2BMF6:Cr3+ (A = Na, K, Rb, Cs; B = Li, Na, K, Cs; M = Al, Ga, Sc, In) peaking at ≈7...
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Veröffentlicht in: | Advanced functional materials 2021-09, Vol.31 (36), p.n/a |
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Sprache: | eng |
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Zusammenfassung: | The discovery of highly efficient broadband near infrared (NIR) emission material is urgent and crucial for constructing NIR lighting sources and emerging applications. Herein, a series of NIR emission hexafluorides A2BMF6:Cr3+ (A = Na, K, Rb, Cs; B = Li, Na, K, Cs; M = Al, Ga, Sc, In) peaking at ≈733–801 nm with a full width at half maximum (FWHM) of ≈98–115 nm are synthesized by a general ammonium salt assisted synthesis strategy. Benefiting from the pre‐ammoniation of the trivalent metal sources, the Cr3+ can be more efficiently doped into the A2BMF6 and simultaneously prevent the generation of the competitive phase. Particularly, Na3ScF6:Cr3+ (λem = 774 nm, FWHM ≈ 108 nm) with optimal Cr3+‐doping concentration of 35.96% shows a high internal quantum efficiency of 91.5% and an external quantum efficiency of ≈40.82%. A lighting emitting diode (LED) device with a NIR output power of ≈291.05 mW at 100 mA driven current and high photoelectric conversion efficiency of 20.94% is fabricated. The general synthesis strategy opens up new avenues for the exploration of Cr3+‐doped high efficiency phosphors, and the as‐obtained record NIR output power demonstrates for NIR LED lighting sources applications.
A series of NIR emission hexafluorides are developed using a general ammonium salt assisted synthesis strategy. Particularly, Na3ScF6:Cr3+ with optimal Cr3+‐doping concentration of 35.96% shows a high internal quantum efficiency of 91.5% and external quantum efficiency of ≈40.82%. A NIR pc‐LED with a high photoelectric conversion efficiency of 20.94% is further fabricated, exhibiting good potential in the special lighting source application. |
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ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.202103743 |