Investigation of resistive switching in gallium oxide nanostructures formed by local anodic oxidation

Effect of resistive switching in gallium oxide structure was studied. It was shown, that gallium oxide structure, formed by local anodic oxidation, demonstrated resistive switching from high-state resistance (HRS) to low-state resistance (LRS) at +4 V, and from LRS to HRS at -6V. RHRS, RLRS, RHRS/RLRS were equaled 11.7±1.6 GΩ, 2.3±0.8 GΩ and 5, respectively. Homogeneity test showed, that RHRS and RLRS were equaled 10.6±2.8 GΩ and 2.5±1.7 GΩ, respectively. It was shown, that confidence interval of resistive switching effect of endurance test for HRS is less on 42% and for LRS is less on 53%, than for homogeneity test So, it was shown that the obtained gallium oxide structure has a uniform effect of resistive switching within 15 measurements. The results can be useful for based on gallium oxide neuromorphic system manufacturing.