Unusual behavior of dislocations freshly-introduced under Schottky contact in GaN

The impact of the dislocations introduced by local plastic deformation on the electric properties of low-ohmic n-GaN was investigated. It was found that the freshly introduced dislocations gave rise to increase of the dc leakage current, to changes in frequency dependence and in the shape of current-voltage, ac conductance and capacitance voltage characteristics of stripe-like Au-Schottky diodes. Besides, a rapid recovery of the dislocation-induced changes of the electric properties to their initial state was observed after several hours at room temperature indicating the impact of the presence of depletion region of Schottky diodes on the dynamic properties of freshly introduced dislocations.