Pseudomorphic HEMT quantum well AlGaAs InGaAs GaAs with AlAs:δ-Si donor layer

Pseudomorphic HEMT quantum well AlGaAs InGaAs GaAs with AlAs:δ-Si donor layer

A comparison between the electron transport and optical properties of pseudomorphic high electron mobility quantum well with conventional AlGaAs donor layer and with AlAs delta-Si doped donor layer is presented. The structure with AlAs donor layer exhibits a mobility rise combined with the electron...

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Veröffentlicht in:IOP conference series. Materials Science and Engineering 2016-10, Vol.151 (1), p.12037
Hauptverfasser: Vinichenko, A N, Vasil'evskii, I S
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum arsenides
Aluminum gallium arsenides
Electron mobility
Electron transport
Indium gallium arsenides
Optical properties
Quantum wells
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Zusammenfassung:A comparison between the electron transport and optical properties of pseudomorphic high electron mobility quantum well with conventional AlGaAs donor layer and with AlAs delta-Si doped donor layer is presented. The structure with AlAs donor layer exhibits a mobility rise combined with the electron concentration decrease. We address this effect to the suppression of electron scattering on remote donor impurities and the decreased doping efficiency of Si atoms embedded in pure AlAs.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/151/1/012037