29.4: Influence of Measuring Environment on the Electrical Characteristics of a‐IGZO thin film transistors

In this paper, we disscuss the influence of measuring environment on the leakage current and Vth of ESL (Etching‐Stop‐Layer structure) and TG‐SA (Top‐Gate self‐aligned structure) a‐IGZO TFTs. Hydrogen and oxygen in air can accumulate on the surface of TFTs, forming electrode with floating potential....

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	SID International Symposium Digest of technical papers 2021-08, Vol.52 (S2), p.401-402
Hauptverfasser:	Liu, Nian, Feng, Zhengyu, Lu, Macai, Mei, Xueru, Liu, Minggang, Gao, Lu, Yao, Jiangbo
Format:	Artikel
Sprache:	eng
Schlagworte:	a-IGZO TFTs ESL Indium gallium zinc oxide Leakage current Semiconductor devices TG-SA Thin film transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!