29.4: Influence of Measuring Environment on the Electrical Characteristics of a‐IGZO thin film transistors

29.4: Influence of Measuring Environment on the Electrical Characteristics of a‐IGZO thin film transistors

In this paper, we disscuss the influence of measuring environment on the leakage current and Vth of ESL (Etching‐Stop‐Layer structure) and TG‐SA (Top‐Gate self‐aligned structure) a‐IGZO TFTs. Hydrogen and oxygen in air can accumulate on the surface of TFTs, forming electrode with floating potential....

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Veröffentlicht in:SID International Symposium Digest of technical papers 2021-08, Vol.52 (S2), p.401-402
Hauptverfasser: Liu, Nian, Feng, Zhengyu, Lu, Macai, Mei, Xueru, Liu, Minggang, Gao, Lu, Yao, Jiangbo
Format: Artikel
Sprache:eng
Schlagworte:
a-IGZO TFTs
ESL
Indium gallium zinc oxide
Leakage current
Semiconductor devices
TG-SA
Thin film transistors
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Zusammenfassung:In this paper, we disscuss the influence of measuring environment on the leakage current and Vth of ESL (Etching‐Stop‐Layer structure) and TG‐SA (Top‐Gate self‐aligned structure) a‐IGZO TFTs. Hydrogen and oxygen in air can accumulate on the surface of TFTs, forming electrode with floating potential. This layer coupled with input signal potential, results in Ioff increasing in both structure, and Vth shifting negatively in the ESL structure.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.15137