Scanning probe nanolithography of resistive memory element based on titanium oxide memristor structures

The paper presents the results of the formation of the resistive memory element prototype based on the memristor structures of titanium oxide using probe nanolithography by the local anodic oxidation. Such structures exhibit a memristor effect without carrying out an additional electroforming operat...

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Veröffentlicht in:	IOP conference series. Materials Science and Engineering 2017-10, Vol.256 (1), p.12001
Hauptverfasser:	Avilov, V I, Polupanov, N V, Tominov, R V, Smirnov, V A, Ageev, O A
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodizing Computer memory Electroforming Memristors Nanolithography Oxidation Titanium oxides
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Beschreibung
Zusammenfassung:	The paper presents the results of the formation of the resistive memory element prototype based on the memristor structures of titanium oxide using probe nanolithography by the local anodic oxidation. Such structures exhibit a memristor effect without carrying out an additional electroforming operation.
ISSN:	1757-8981 1757-899X
DOI:	10.1088/1757-899X/256/1/012001