Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE
GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of...
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Veröffentlicht in: | IEEE journal of photovoltaics 2021-09, Vol.11 (5), p.1251-1255 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm 2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm 2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%. |
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ISSN: | 2156-3381 2156-3403 |
DOI: | 10.1109/JPHOTOV.2021.3095756 |