Residual stress relaxation of cubic boron nitride thin films deposited in Ar with other noble gases

A novel method based on radio frequency magnetron sputtering tailored to the deposition of low residual stress and adherent c-BN thin films on silicon substrates was developed. In this study, the effect of noble gas (Kr, Ar, Ne and He) added in Ar gas during sputtering on the residual stress and the...

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Veröffentlicht in:	IOP conference series. Materials Science and Engineering 2011-03, Vol.20 (1), p.012017-5
Hauptverfasser:	Ohori, T, Shirahata, J, Suzuki, T, Nakayama, T, Suematsu, H, Lee, S W, Fu, Z, Niihara, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Argon Cubic boron nitride Deposition Flow velocity Gas flow Gases Helium Magnetron sputtering Noble gases Rare gases Residual stress Silicon substrates Stress relaxation Thin films
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