Residual stress relaxation of cubic boron nitride thin films deposited in Ar with other noble gases

Residual stress relaxation of cubic boron nitride thin films deposited in Ar with other noble gases

A novel method based on radio frequency magnetron sputtering tailored to the deposition of low residual stress and adherent c-BN thin films on silicon substrates was developed. In this study, the effect of noble gas (Kr, Ar, Ne and He) added in Ar gas during sputtering on the residual stress and the...

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Veröffentlicht in:IOP conference series. Materials Science and Engineering 2011-03, Vol.20 (1), p.012017-5
Hauptverfasser: Ohori, T, Shirahata, J, Suzuki, T, Nakayama, T, Suematsu, H, Lee, S W, Fu, Z, Niihara, K
Format: Artikel
Sprache:eng
Schlagworte:
Argon
Cubic boron nitride
Deposition
Flow velocity
Gas flow
Gases
Helium
Magnetron sputtering
Noble gases
Rare gases
Residual stress
Silicon substrates
Stress relaxation
Thin films
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Beschreibung
Zusammenfassung:A novel method based on radio frequency magnetron sputtering tailored to the deposition of low residual stress and adherent c-BN thin films on silicon substrates was developed. In this study, the effect of noble gas (Kr, Ar, Ne and He) added in Ar gas during sputtering on the residual stress and the c-BN content has been investigated. As a result, it was found that the residual stress of c-BN thin film decreased with increasing the helium gas flow rate within argon gas.
ISSN:1757-899X
1757-8981
1757-899X
DOI:10.1088/1757-899X/20/1/012017