Residual stress relaxation of cubic boron nitride thin films deposited in Ar with other noble gases
A novel method based on radio frequency magnetron sputtering tailored to the deposition of low residual stress and adherent c-BN thin films on silicon substrates was developed. In this study, the effect of noble gas (Kr, Ar, Ne and He) added in Ar gas during sputtering on the residual stress and the...
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| Veröffentlicht in: | IOP conference series. Materials Science and Engineering 2011-03, Vol.20 (1), p.012017-5 |
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| container_title | IOP conference series. Materials Science and Engineering |
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| creator | Ohori, T Shirahata, J Suzuki, T Nakayama, T Suematsu, H Lee, S W Fu, Z Niihara, K |
| description | A novel method based on radio frequency magnetron sputtering tailored to the deposition of low residual stress and adherent c-BN thin films on silicon substrates was developed. In this study, the effect of noble gas (Kr, Ar, Ne and He) added in Ar gas during sputtering on the residual stress and the c-BN content has been investigated. As a result, it was found that the residual stress of c-BN thin film decreased with increasing the helium gas flow rate within argon gas. |
| doi_str_mv | 10.1088/1757-899X/20/1/012017 |
| format | Article |
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As a result, it was found that the residual stress of c-BN thin film decreased with increasing the helium gas flow rate within argon gas.</description><subject>Argon</subject><subject>Cubic boron nitride</subject><subject>Deposition</subject><subject>Flow velocity</subject><subject>Gas flow</subject><subject>Gases</subject><subject>Helium</subject><subject>Magnetron sputtering</subject><subject>Noble gases</subject><subject>Rare gases</subject><subject>Residual stress</subject><subject>Silicon substrates</subject><subject>Stress relaxation</subject><subject>Thin films</subject><issn>1757-899X</issn><issn>1757-8981</issn><issn>1757-899X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kF1LwzAUhosoOKc_QQh444WzJ_1I2ssx_IKBIArehTQ9cRldU5MW9d-bUVGR4VWSl-fNOTxRdErhkkJRxJTnfFaU5XOcQExjoAlQvhdNvvP9X_fD6Mj7NQDjWQaTSD2gN_UgG-J7h94Th418l72xLbGaqKEyilTWhWdremdqJP3KtESbZuNJjZ31pseahGjuyJvpV8T2K3SktVWD5EV69MfRgZaNx5Ovcxo9XV89Lm5ny_ubu8V8OVMpJHymgUlUSVWleamZziAHxmSelVlSACqqQWHFIFV1pbRiBadVXqPURS5LyVmZTqPz8d_O2dcBfS82xitsGtmiHbygPAUogp4koGd_0LUdXBu2E0nOaBjJ0y2Vj5Ry1nuHWnTObKT7EBTEVr3YahVbrSIJiRjVh97F2DO2-6nsQkVX64DDDvzfCZ9G_5PB</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>Ohori, T</creator><creator>Shirahata, J</creator><creator>Suzuki, T</creator><creator>Nakayama, T</creator><creator>Suematsu, H</creator><creator>Lee, S W</creator><creator>Fu, Z</creator><creator>Niihara, K</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QQ</scope><scope>7SR</scope><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>KR7</scope><scope>L7M</scope></search><sort><creationdate>20110301</creationdate><title>Residual stress relaxation of cubic boron nitride thin films deposited in Ar with other noble gases</title><author>Ohori, T ; 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| subjects | Argon Cubic boron nitride Deposition Flow velocity Gas flow Gases Helium Magnetron sputtering Noble gases Rare gases Residual stress Silicon substrates Stress relaxation Thin films |
| title | Residual stress relaxation of cubic boron nitride thin films deposited in Ar with other noble gases |
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