Accurate determination of junction temperature in a GaN-based blue light-emitting diode using nonlinear voltage-temperature relation

We investigate the junction temperature measurements for GaN-based blue light emitting diodes (LEDs) using nonlinear dependence of the forward voltage ( V f ) on temperature. Unlike the conventional linear model of the dependence of V f on temperature, the modeling of the temperature dependent V f with a quadratic function showed good agreements with measured data in the temperature range between 20 and 100 °C. Using the proposed quadratic model, the junction temperature and thermal resistance of the measured LED could be accurately determined as the ambient temperature varied. It was observed that the junction temperature increment remained almost unchanged as the ambient temperature increased from 20 to 80 °C, which could be attributed to the interplay between the decrease in series resistance and the increase in non-radiative recombination with increasing temperature. The presented method for accurate determination of the junction temperature is expected to be advantageously employed for the thermal management of high-power LEDs.