Structural, electronic and optical properties of GeX (X = N, P and As) monolayer: under stress and strain conditions

Applying first-principles of Density Functional Theory, the current study aims to discover optical, structural and electronic features of two-dimensional (2D) hexagonal structure of IV–V binary monolayer compounds, GeX (X = N, P and As) under the conditions of stress and strain. The findings revealed that applying stress and strain conditions may make an adjustable energy gap which has a linear tendency. The valance band maximum and conduction band minimum graph is susceptible to exert strain and stress. Furthermore, a blue shift appears in the optical spectra of monolayer structures under compressive strain conditions, although a red shift is observed in the optical spectra of materials as a result of applying tensile strain. The findings show that the GeX monolayers are possibly promising applicants to be used in new optoelectronic applications.