Simulations of electrical properties of cylindrical 3d-trench electrical si detectors under different radiation fluences and mip incident position

In this work, we investigate the dependence of charge collection on the MIP(minimum ionizing particle) incident position for cylindrical 3D-Trench electrode Si detectors being irradiated to various fluences. Simulation results are: (1) For non-irradiated detectors, detector charge collection does not depend on the MIP incident position, i.e. the charge collection is always a constant, there is no effect of trapping; (2) For irradiated detectors, detector charge collection depends on the MIP incident position; (3) As radiation fluence increases, detector charge collection decreases, regardless of MIP incident position. This is due to the fact that charge trapping by radiation induced defects also increases with radiation fluences, resulting in less charge collection.