Effect of Metal and Metal Oxide Dielectric Thickness on Physical Properties of Conductive Transparent MoO3/In/Cu/In/MoO3 Thin Film

MoO 3 /In/Cu/In/MoO 3 thin film has been deposited on glass substrate by a thermal evaporation method. To identify the optimal structure with the highest figure of merit, we investigated the effect of the MoO 3 , Cu, and In thicknesses on the physical and electrooptical properties of the thin film. The experimental results indicated that, when decreasing the thickness of the MoO 3 top layer, the sheet resistance of the thin film decreased. In addition, we found that the surface roughness strongly depended on the copper thickness. The best maximum figure of merit achieved was 3.89 × 10 - 3 Ω - 1 for an indium thickness of 4 nm, copper thickness of 8 nm, and MoO 3 bottom and top layer thicknesses of 20 nm and 35 nm, respectively.