Investigation of Ru-doped Sb2Te alloy for high-speed and good thermal stability phase change memory applications

Phase change memory (PCM) is regarded as a promising candidate for next-generation data storage devices. However, the contradiction between crystallization speed and amorphous thermal stability is still a great challenge. In this paper, we demonstrate PCM based on Ru-doped Sb 2 Te (RST) alloy, showing 112 °C 10-year data retention, 229 °C crystallization temperature, 6 ns Set speed, and 85% reduced power consumption compared to Sb 2 Te(ST)-based device. The good performance attributes to the grain refinement of the crystalline films with inclusion of Ru, making it a promising material for high-speed and good thermal stability phase change memory applications.