Phonon Spectrum of Led InGaN/GaN Heterostructure with Quantum Wells

The measurements of the phonon spectrum of a LED heterostructure based on the In 0.12 Ga 0.88 N/GaN barrier showed the presence of four phonon radiation peaks with energies of 0.193, 0.207, 0.353, and 0.356 eV. It was assumed from the comparison of the calculation results of energy spectra of the electron and hole quantum wells with the obtained experimental data that these peaks can be interpreted as the energies of phonons generated during the capture of electrons from the barrier layer to the second level of dimensional quantization, as well as during the relaxation of electrons from the second level to the radiation level and trapping of holes to the upper level of the quantum well.