Study of coulomb drag with the effect of local field correction and dielectric medium

We present a numerical calculation for the drag resistivity of charge carriers interaction in coupled layer system separated by a barrier. Analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction have been shown for non homogeneous dielectric environment at low temperature and low frequency regime. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC). We employ Hubbard approximations (HA) and self consistent STLS approximations based LFC for obtaining the results, where LFC includes the exchange and correlation effects. Exchange and correlation effects enhanced the drag resistivity and the net screening. Another important quantity is the local form factors (LFF), which is the function of the bare inter- and intra-layer potential of the dielectric media. LFF for a multi-layer system is derived from the Poisson equation solution. •We have measured the drag resistivity in 2D-GaAs bilayer system for weakly interacting regime.•Analytical expressions of response function are used in Boltzmann regime and bare Coulomb interaction for non-homogeneous dielectric environment which make the system interested and different compare to others.•RPA method is used to evaluate the results with including exchange and correlation effects. Exchange and correlation effects are considered in the calculation using Hubbard and STLS approximations in dielectric function.•The Local Form Factor (LFF) are obtained from the solution of the Poisson equation of a three-layer dielectric medium.•Drag resistivity dependency is measured numerically with respect to temperature T and density n and compared to other 2DES.