Investigation of magneto-transport properties of the co-doped La1.6-xPrxCa1.4-xBaxMn2O7 (x = 0.2 and 0.4) double-layered manganite
Structural and magneto-electrical transport properties of double-layered La 1.6-x Pr x Ca 1.4-x Ba x Mn 2 O 7 (x = 0.2 and 0.4) manganite compounds were studied. X-ray diffraction patterns refinement shows that the samples crystallize in a tetragonal I4/mmm structure, whereas a rhombohedral structur...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2021-07, Vol.32 (14), p.18808-18824 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Structural and magneto-electrical transport properties of double-layered La
1.6-x
Pr
x
Ca
1.4-x
Ba
x
Mn
2
O
7
(x = 0.2 and 0.4) manganite compounds were studied. X-ray diffraction patterns refinement shows that the samples crystallize in a tetragonal
I4/mmm
structure, whereas a rhombohedral structure phase with
R
3
-
c
space group is detected as a secondary phase. The electrical resistivity under 0 and 1 T exhibited a metal–insulator transition at T
MI
. It is found that the ρ(T) decreases with increasing Pr-Ba contents. Magnetoresistance (MR%) curves displayed a maximum value of ∼51.69% at 63 K for the x = 0.2 sample and decreases with increasing Pr-Ba concentrations to ∼33.44% at 64 K for x = 0.4 under 1 T. The obtained values of the temperature coefficient of resistivity for both samples have similar trend as T
MI
. Below
T
MI
,
ρ
T
=
ρ
0
-
ρ
0.5
T
0.5
+
ρ
2
T
2
+
ρ
5
T
5
model fits well the resistivity curves which reflect a combination of the grain boundary effects, weak localization, electron–electron, and electron–phonon scattering to the electrical resistivity. Above T
MI
, the non-adiabatic small polaron hopping model describes the electrical resistivity behavior in
T
>
θ
D
/
2
region. The Mott’s 3D variable range hopping mechanism (3D-VRH) was found to be the most suitable mechanism for describing the high-temperature resistivity behavior between T
MI
and θ
D
/2. The density of states near the Fermi level
N
(
E
F
)
, mean hopping distance,
(
R
h
)
and mean hopping energy
(
E
h
)
of the charge carriers have been calculated from the experimental curves using Mott’s 3D-VRH model. The experimental and fitting curves of the resistivity and the related results are discussed in detail. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-021-06398-0 |