Luminescence and scintillation properties of Gd3Sc2(Al3-xGax)O12:Ce (x = 1, 2, 3) garnet crystals

The luminescence and scintillation characteristics of Ce3+ - doped Gd3Sc2(Al3-xGax)O12 (x = 1, 2, 3) garnet crystals were investigated. The Ce3+ luminescence was blue-shifted with increasing Ga content due to the decrease of the crystal field strength. A decrease of Ce3+ luminescence intensity and luminescence decay time at high temperature was observed for all samples due to thermal ionization of the Ce3+ 5d1 excited levels. With increasing Ga content the decrease of thermal activation energies, determined from temperature dependence of decay times, was obtained. Both Gd3Sc2Al2GaO12:Ce and Gd3Sc2AlGa2O12:Ce samples exhibited a comparable light yield (LY) value of 24,000 photons/MeV while the latter sample showed faster scintillation decay time of 12 ns (11%) + 56 ns (89%) with respect to those of 55 ns (28%) + 105 ns (72%) for the former sample. An acceleration of scintillation decay time with an expense of LY value was also obtained for the Mg2+-codoped sample. At low temperature a decrease of scintillation yield was observed in correlation with the intense thermoluminescence peaks, attributing to the localization of electrons at intrinsic shallow traps. •Scintillation properties of Gd3Sc2(Al3-xGax)O12 (x = 1, 2, 3) were investigated.•Temperature dependences of RL yield and PL decay time were measured.•Thermal activation energy decreased with increasing Ga content.•Luminescence quenching at RT was obtained due to thermal ionization.•Low-temperature thermoluminescence was investigated.