Photo- and Radioluminescence Properties of Ce3+-doped Lu3Al5O12 Thick Film Grown by Chemical Vapor Deposition

We demonstrate the rapid synthesis of Ce3+-doped Lu3Al5O12 (Ce3+:LuAG) thick film phosphor grown by laser-assisted chemical vapor deposition. The radioluminescence properties of the film are compared with those of Ce3+:LuAG single crystals. The (100) Ce3+-LuAG thick film was epitaxially grown on a (100) Y3Al5O12 substrate at a deposition rate of 16 nm s−1. Under UV and X-ray irradiation, the film emitted a yellow-green light originating from 5d–4f transitions of Ce3+ ions. Under α-ray excitation from an 241Am source, the scintillation decay curve of the Ce3+:LuAG thick film was fitted to two time constants, 32 and 666 ns, associated with the Ce3+ centers and antisite defects in garnet structures, respectively.