Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation

Resistive random access memory (RRAM) devices were designed using Al 2 O 3 /La 2 O 3 /Al 2 O 3 multi-stacked films grown by atomic layer deposition as functional layers. The impact of Al + ions implantation on the resistive switching performances of the RRAM devices was investigated. Compared with the control sample without Al + implantation, forming-free operation and larger ON/OFF resistance ratio were achieved in the Al + implanted RRAM device. Besides, the resistive switching stability and electrical uniformity of the implanted device were enhanced. The enhanced performances of the Al + implanted RRAM device were deduced by the improvement in the formation and disruption of conducting filaments in the Al 2 O 3 /La 2 O 3 /Al 2 O 3 multi-stacked films.