GLAD synthesised erbium doped In2O3 nano-columns for UV detection

We have reported the growth of In 2 O 3 and Er-doped In 2 O 3 (In 2 O 3 :Er) nano-columns (NCols) by e-beam cum GLAD techniques. An increase in the packing density of the NCols was observed with increasing Er doping. In 2 O 3 shows a body-centred cubic crystal structure. Reduction in the crystallite size with Er-doping is observed. The bandgap of undoped In 2 O 3 NCols (~ 3.50 eV) is increased to a maximum ~ 3.80 eV (0.48 at.% Er). The free carrier and trap concentration decrease from ~ 1.46 × 10 17 to ~ 4.18 × 10 15 cm −3 and ~ 2.78 × 10 17 cm −3 to ~ 8.45 × 10 15 cm −3 respectively for In 2 O 3 NCol and 0.48 at.% In 2 O 3 :Er NCol control samples. The Au/0.48 at.% In 2 O 3 :Er/Si device showed higher sensitivity towards white light and 350 nm UV light compared to other devices under different applied powers of the xenon (Xe) lamp. The UV responsivity was observed to be ~ 2.2 times larger than the visible light. The temporal response of Au/0.48 at.% In 2 O 3 :Er/Si device also showed noteworthy development.