Thermal Oxidation of a Single-Crystal GaAs Surface Treated in Sulfur Vapor

— Surface modification of GaAs in sulfur vapor by different procedures and subsequent annealing and thermal oxidation have an advantageous effect on the properties of heterostructures, ensuring binding of the constituent components of the substrate and the formation of films with a uniform surface, without well-defined defects. The approaches proposed in this work allow films of nanometer thickness with resistivity from ~10 8 to ~10 10 Ω cm to be grown on the surface of GaAs by a simple method.