Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO layer and TiO protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO layers of 2, 4, and 6 nm thickness pres...

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Veröffentlicht in:	Journal of Electrical Engineering 2021-06, Vol.72 (3), p.203-207
Hauptverfasser:	Mikolášek, Miroslav, Fröhlich, Karol, Hušeková, Kristína, Ondrejka, Peter, Chymo, Filip, Kemény, Martin, Hotovy, Ivan, Harmatha, Ladislav
Format:	Artikel
Sprache:	eng
Schlagworte:	Catalytic activity Chemical vapor deposition MIS MIS (semiconductors) Organic chemicals Organic chemistry Oxidation RuO Ruthenium oxide Thickness TiO Titanium dioxide water oxidation Water splitting
Online-Zugang:	Volltext
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