Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO layer and TiO protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO . The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO layer thickness is discussed in the paper. Results revealed that utilization of TiO layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.