Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation
This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO layer and TiO protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO layers of 2, 4, and 6 nm thickness pres...
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| Veröffentlicht in: | Journal of Electrical Engineering 2021-06, Vol.72 (3), p.203-207 |
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| container_title | Journal of Electrical Engineering |
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| creator | Mikolášek, Miroslav Fröhlich, Karol Hušeková, Kristína Ondrejka, Peter Chymo, Filip Kemény, Martin Hotovy, Ivan Harmatha, Ladislav |
| description | This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO
layer and TiO
protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO
layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO
. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO
layer thickness is discussed in the paper. Results revealed that utilization of TiO
layer in the MIS concept is suitable for photoelectrochemical water oxidation applications. |
| doi_str_mv | 10.2478/jee-2021-0028 |
| format | Article |
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layer and TiO
protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO
layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO
. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO
layer thickness is discussed in the paper. Results revealed that utilization of TiO
layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.</description><identifier>ISSN: 1335-3632</identifier><identifier>EISSN: 1339-309X</identifier><identifier>DOI: 10.2478/jee-2021-0028</identifier><language>eng</language><publisher>Bratislava: Sciendo</publisher><subject>Catalytic activity ; Chemical vapor deposition ; MIS ; MIS (semiconductors) ; Organic chemicals ; Organic chemistry ; Oxidation ; RuO ; Ruthenium oxide ; Thickness ; TiO ; Titanium dioxide ; water oxidation ; Water splitting</subject><ispartof>Journal of Electrical Engineering, 2021-06, Vol.72 (3), p.203-207</ispartof><rights>2021. This work is published under http://creativecommons.org/licenses/by-nc-nd/4.0 (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://sciendo.com/pdf/10.2478/jee-2021-0028$$EPDF$$P50$$Gwalterdegruyter$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://sciendo.com/article/10.2478/jee-2021-0028$$EHTML$$P50$$Gwalterdegruyter$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27924,27925,76164,76165</link.rule.ids></links><search><creatorcontrib>Mikolášek, Miroslav</creatorcontrib><creatorcontrib>Fröhlich, Karol</creatorcontrib><creatorcontrib>Hušeková, Kristína</creatorcontrib><creatorcontrib>Ondrejka, Peter</creatorcontrib><creatorcontrib>Chymo, Filip</creatorcontrib><creatorcontrib>Kemény, Martin</creatorcontrib><creatorcontrib>Hotovy, Ivan</creatorcontrib><creatorcontrib>Harmatha, Ladislav</creatorcontrib><title>Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation</title><title>Journal of Electrical Engineering</title><description>This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO
layer and TiO
protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO
layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO
. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO
layer thickness is discussed in the paper. Results revealed that utilization of TiO
layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.</description><subject>Catalytic activity</subject><subject>Chemical vapor deposition</subject><subject>MIS</subject><subject>MIS (semiconductors)</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Oxidation</subject><subject>RuO</subject><subject>Ruthenium oxide</subject><subject>Thickness</subject><subject>TiO</subject><subject>Titanium dioxide</subject><subject>water oxidation</subject><subject>Water splitting</subject><issn>1335-3632</issn><issn>1339-309X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpFkE1Lw0AQhhdRsNQevS94jt2dSZoET1K_CpWCVvAWNptJk5Jm42Zj9d-7rYKneYd5mBkexi6luIYwTqZbogAEyEAISE7YSCKmAYr0_fSYowBnCOds0vdbIYQMUwjFbMSGO_qkxnQ7ah1XbcF1pazSjmzdK1eblpuSd5VxhhrSzhpd0a7WquHPi1feOztoN1jq-b52FX8ZVjBd1yvgG-XIj5XueWks3_vWcvNVF8elF-ysVE1Pk786Zm8P9-v5U7BcPS7mt8ugAxG6QKIosEhzKhOhEeNCF4glyCgtUatcYxlDmkISKcwhSSjxIOQQQxzJpFCEY3b1u7ez5mOg3mVbM9jWn8wgiqTHZnHoqZtfaq8a_2ZBGzt8-_APS5EdJGdecnaQnB0kx4AgEH8AL9pzNg</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Mikolášek, Miroslav</creator><creator>Fröhlich, Karol</creator><creator>Hušeková, Kristína</creator><creator>Ondrejka, Peter</creator><creator>Chymo, Filip</creator><creator>Kemény, Martin</creator><creator>Hotovy, Ivan</creator><creator>Harmatha, Ladislav</creator><general>Sciendo</general><general>De Gruyter Poland</general><scope>7SP</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>L7M</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20210601</creationdate><title>Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation</title><author>Mikolášek, Miroslav ; 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layer and TiO
protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO
layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO
. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO
layer thickness is discussed in the paper. Results revealed that utilization of TiO
layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.</abstract><cop>Bratislava</cop><pub>Sciendo</pub><doi>10.2478/jee-2021-0028</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Walter De Gruyter: Open Access Journals |
| subjects | Catalytic activity Chemical vapor deposition MIS MIS (semiconductors) Organic chemicals Organic chemistry Oxidation RuO Ruthenium oxide Thickness TiO Titanium dioxide water oxidation Water splitting |
| title | Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation |
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