Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond
The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hydrogen-terminated (100) diamond is investigated. Low-temperature magneto-conductance measurements were carried out with an applied in-plane magnetic field to quantify the...
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Veröffentlicht in: | Diamond and related materials 2021-06, Vol.116, p.108377, Article 108377 |
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creator | Yianni, Steve A. Creedon, Daniel L. Schenk, Alex K. Xing, Kaijian Akhgar, Golrokh Hoxley, David I. Ley, Lothar McCallum, Jeffrey C. Pakes, Christopher I. |
description | The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hydrogen-terminated (100) diamond is investigated. Low-temperature magneto-conductance measurements were carried out with an applied in-plane magnetic field to quantify the effect of electronic micro-roughness on spin dephasing in the 2D hole band for Hall bar devices with similar transport characteristics, but significantly different topographic roughness. The electronic micro-roughness of the 2D hole band, described by the parameter d2L, where d is the root-mean-square (rms) fluctuation in the width of the quantum well and L is the correlation length of the fluctuations, is found to increase for surfaces with increased roughness. Fluctuations in the well width likely arise from a locally varying hole carrier density, arising for example from a local variation in the concentration of ionic components in the surface water layer.
[Display omitted]
•Influence of surface topography on phase coherent transport in two-dimensional (2D) hole band of surface doped diamond.•Spin dephasing, observed through suppression of weak anti-localisation, is used to quantify the roughness of the 2D hole gas.•The electronic micro-roughness is found to increase with the physical roughness of the diamond surface. |
doi_str_mv | 10.1016/j.diamond.2021.108377 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2551251629</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0925963521001400</els_id><sourcerecordid>2551251629</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-f217788226d09d448abc4ef3aa8b4e9cb3d6efc242eab63b042799adefea9edb3</originalsourceid><addsrcrecordid>eNqFkM1KAzEUhYMoWKuPIARcT00yv1mJFP-g4EbXIZPcmWboJDXJWPoEvrYpLW5dXbicczjnQ-iWkgUltLofFtrI0Vm9YITR9Gvyuj5DM9rUPCOkYudoRjgrM17l5SW6CmEghDJe0Bn6WTrvYSOjcRa3EHcAFsMGVPTOGoVHo7zLvJv6tYUQsLQah8l3UgGObut6L7frPTYWx53LtBnBhhQlN38qlYpNKhrb4_Vee9eDzSL40VgZQeNT9Wt00clNgJvTnaPP56eP5Wu2en95Wz6uMpXndcw6Ruu6aRirNOG6KBrZqgK6XMqmLYCrNtcVdIoVDGRb5S0pWM251NCB5KDbfI7ujrlb774mCFEMbvKpbxCsLCkracV4UpVHVRofgodObL0Zpd8LSsSBuRjEqbg4MBdH5sn3cPRBmvBtwIugDFgF2viEVGhn_kn4BSAKkls</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2551251629</pqid></control><display><type>article</type><title>Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond</title><source>Access via ScienceDirect (Elsevier)</source><creator>Yianni, Steve A. ; Creedon, Daniel L. ; Schenk, Alex K. ; Xing, Kaijian ; Akhgar, Golrokh ; Hoxley, David I. ; Ley, Lothar ; McCallum, Jeffrey C. ; Pakes, Christopher I.</creator><creatorcontrib>Yianni, Steve A. ; Creedon, Daniel L. ; Schenk, Alex K. ; Xing, Kaijian ; Akhgar, Golrokh ; Hoxley, David I. ; Ley, Lothar ; McCallum, Jeffrey C. ; Pakes, Christopher I.</creatorcontrib><description>The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hydrogen-terminated (100) diamond is investigated. Low-temperature magneto-conductance measurements were carried out with an applied in-plane magnetic field to quantify the effect of electronic micro-roughness on spin dephasing in the 2D hole band for Hall bar devices with similar transport characteristics, but significantly different topographic roughness. The electronic micro-roughness of the 2D hole band, described by the parameter d2L, where d is the root-mean-square (rms) fluctuation in the width of the quantum well and L is the correlation length of the fluctuations, is found to increase for surfaces with increased roughness. Fluctuations in the well width likely arise from a locally varying hole carrier density, arising for example from a local variation in the concentration of ionic components in the surface water layer.
[Display omitted]
•Influence of surface topography on phase coherent transport in two-dimensional (2D) hole band of surface doped diamond.•Spin dephasing, observed through suppression of weak anti-localisation, is used to quantify the roughness of the 2D hole gas.•The electronic micro-roughness is found to increase with the physical roughness of the diamond surface.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2021.108377</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Carrier density ; Diamond ; Diamonds ; Electron spin ; Low temperature ; Phase coherent backscattering ; Quantum wells ; Resistance ; Roughness ; Surface water ; Topography ; Transport properties ; Weak anti-localisation ; Weak localization</subject><ispartof>Diamond and related materials, 2021-06, Vol.116, p.108377, Article 108377</ispartof><rights>2021 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jun 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-f217788226d09d448abc4ef3aa8b4e9cb3d6efc242eab63b042799adefea9edb3</citedby><cites>FETCH-LOGICAL-c337t-f217788226d09d448abc4ef3aa8b4e9cb3d6efc242eab63b042799adefea9edb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.diamond.2021.108377$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Yianni, Steve A.</creatorcontrib><creatorcontrib>Creedon, Daniel L.</creatorcontrib><creatorcontrib>Schenk, Alex K.</creatorcontrib><creatorcontrib>Xing, Kaijian</creatorcontrib><creatorcontrib>Akhgar, Golrokh</creatorcontrib><creatorcontrib>Hoxley, David I.</creatorcontrib><creatorcontrib>Ley, Lothar</creatorcontrib><creatorcontrib>McCallum, Jeffrey C.</creatorcontrib><creatorcontrib>Pakes, Christopher I.</creatorcontrib><title>Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond</title><title>Diamond and related materials</title><description>The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hydrogen-terminated (100) diamond is investigated. Low-temperature magneto-conductance measurements were carried out with an applied in-plane magnetic field to quantify the effect of electronic micro-roughness on spin dephasing in the 2D hole band for Hall bar devices with similar transport characteristics, but significantly different topographic roughness. The electronic micro-roughness of the 2D hole band, described by the parameter d2L, where d is the root-mean-square (rms) fluctuation in the width of the quantum well and L is the correlation length of the fluctuations, is found to increase for surfaces with increased roughness. Fluctuations in the well width likely arise from a locally varying hole carrier density, arising for example from a local variation in the concentration of ionic components in the surface water layer.
[Display omitted]
•Influence of surface topography on phase coherent transport in two-dimensional (2D) hole band of surface doped diamond.•Spin dephasing, observed through suppression of weak anti-localisation, is used to quantify the roughness of the 2D hole gas.•The electronic micro-roughness is found to increase with the physical roughness of the diamond surface.</description><subject>Carrier density</subject><subject>Diamond</subject><subject>Diamonds</subject><subject>Electron spin</subject><subject>Low temperature</subject><subject>Phase coherent backscattering</subject><subject>Quantum wells</subject><subject>Resistance</subject><subject>Roughness</subject><subject>Surface water</subject><subject>Topography</subject><subject>Transport properties</subject><subject>Weak anti-localisation</subject><subject>Weak localization</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqFkM1KAzEUhYMoWKuPIARcT00yv1mJFP-g4EbXIZPcmWboJDXJWPoEvrYpLW5dXbicczjnQ-iWkgUltLofFtrI0Vm9YITR9Gvyuj5DM9rUPCOkYudoRjgrM17l5SW6CmEghDJe0Bn6WTrvYSOjcRa3EHcAFsMGVPTOGoVHo7zLvJv6tYUQsLQah8l3UgGObut6L7frPTYWx53LtBnBhhQlN38qlYpNKhrb4_Vee9eDzSL40VgZQeNT9Wt00clNgJvTnaPP56eP5Wu2en95Wz6uMpXndcw6Ruu6aRirNOG6KBrZqgK6XMqmLYCrNtcVdIoVDGRb5S0pWM251NCB5KDbfI7ujrlb774mCFEMbvKpbxCsLCkracV4UpVHVRofgodObL0Zpd8LSsSBuRjEqbg4MBdH5sn3cPRBmvBtwIugDFgF2viEVGhn_kn4BSAKkls</recordid><startdate>202106</startdate><enddate>202106</enddate><creator>Yianni, Steve A.</creator><creator>Creedon, Daniel L.</creator><creator>Schenk, Alex K.</creator><creator>Xing, Kaijian</creator><creator>Akhgar, Golrokh</creator><creator>Hoxley, David I.</creator><creator>Ley, Lothar</creator><creator>McCallum, Jeffrey C.</creator><creator>Pakes, Christopher I.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>202106</creationdate><title>Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond</title><author>Yianni, Steve A. ; Creedon, Daniel L. ; Schenk, Alex K. ; Xing, Kaijian ; Akhgar, Golrokh ; Hoxley, David I. ; Ley, Lothar ; McCallum, Jeffrey C. ; Pakes, Christopher I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-f217788226d09d448abc4ef3aa8b4e9cb3d6efc242eab63b042799adefea9edb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Carrier density</topic><topic>Diamond</topic><topic>Diamonds</topic><topic>Electron spin</topic><topic>Low temperature</topic><topic>Phase coherent backscattering</topic><topic>Quantum wells</topic><topic>Resistance</topic><topic>Roughness</topic><topic>Surface water</topic><topic>Topography</topic><topic>Transport properties</topic><topic>Weak anti-localisation</topic><topic>Weak localization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yianni, Steve A.</creatorcontrib><creatorcontrib>Creedon, Daniel L.</creatorcontrib><creatorcontrib>Schenk, Alex K.</creatorcontrib><creatorcontrib>Xing, Kaijian</creatorcontrib><creatorcontrib>Akhgar, Golrokh</creatorcontrib><creatorcontrib>Hoxley, David I.</creatorcontrib><creatorcontrib>Ley, Lothar</creatorcontrib><creatorcontrib>McCallum, Jeffrey C.</creatorcontrib><creatorcontrib>Pakes, Christopher I.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yianni, Steve A.</au><au>Creedon, Daniel L.</au><au>Schenk, Alex K.</au><au>Xing, Kaijian</au><au>Akhgar, Golrokh</au><au>Hoxley, David I.</au><au>Ley, Lothar</au><au>McCallum, Jeffrey C.</au><au>Pakes, Christopher I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond</atitle><jtitle>Diamond and related materials</jtitle><date>2021-06</date><risdate>2021</risdate><volume>116</volume><spage>108377</spage><pages>108377-</pages><artnum>108377</artnum><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hydrogen-terminated (100) diamond is investigated. Low-temperature magneto-conductance measurements were carried out with an applied in-plane magnetic field to quantify the effect of electronic micro-roughness on spin dephasing in the 2D hole band for Hall bar devices with similar transport characteristics, but significantly different topographic roughness. The electronic micro-roughness of the 2D hole band, described by the parameter d2L, where d is the root-mean-square (rms) fluctuation in the width of the quantum well and L is the correlation length of the fluctuations, is found to increase for surfaces with increased roughness. Fluctuations in the well width likely arise from a locally varying hole carrier density, arising for example from a local variation in the concentration of ionic components in the surface water layer.
[Display omitted]
•Influence of surface topography on phase coherent transport in two-dimensional (2D) hole band of surface doped diamond.•Spin dephasing, observed through suppression of weak anti-localisation, is used to quantify the roughness of the 2D hole gas.•The electronic micro-roughness is found to increase with the physical roughness of the diamond surface.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2021.108377</doi></addata></record> |
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subjects | Carrier density Diamond Diamonds Electron spin Low temperature Phase coherent backscattering Quantum wells Resistance Roughness Surface water Topography Transport properties Weak anti-localisation Weak localization |
title | Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond |
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